US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

Posted On: 2026-09-01

ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,188, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device and method of fabricati... Read More

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Method for fabricating high electron mobility transistor" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,189, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "Method for fabricating high electron mobili... Read More

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device including inclined channel layer and electronic device including the semiconductor device" (South Korean Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,190, issued on Sept. 1, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including inclined c... Read More

US Patent Issued to International Business Machines on Sept. 1 for "Multiple fin heights for effective width tuning" (New York Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,191, issued on Sept. 1, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Multiple fin heights for effective width tun... Read More

US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,192, issued on Sept. 1, was assigned to SHANGHAI BRIGHT POWER SEMICONDUCTOR Co. LTD. (Shanghai). "Metal-oxide semiconductor field-effect tr... Read More

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "FinFET LDMOS device" (Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,193, issued on Sept. 1, was assigned to UNITED MICROELECTRONICS CORP. (Hsin-Chu City, Taiwan). "FinFET LDMOS device" was invented by Yi Chu... Read More

US Patent Issued to Wolfspeed on Sept. 1 for "Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions" (North Carolina Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,194, issued on Sept. 1, was assigned to Wolfspeed Inc. (Durham, N.C.). "Semiconductor die having a drift region with a charge compensation ... Read More

US Patent Issued to ROHM on Sept. 1 for "Semiconductor device with groove structure" (Japanese Inventor)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,195, issued on Sept. 1, was assigned to ROHM Co. LTD. (Kyoto, Japan). "Semiconductor device with groove structure" was invented by Kentaro ... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for manufacturing semiconductor structure with thin film transistor" (Belgian, Taiwanese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,196, issued on Sept. 1, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method for manufacturing semico... Read More

US Patent Issued to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY on Sept. 1 for "Thin film transistor and electronic device thereof" (Chinese Inventors)

Posted On: 2026-09-01

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ALEXANDRIA, Va., Sept. 1 -- United States Patent no. 12,727,197, issued on Sept. 1, was assigned to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY Co. LTD. (Wuhan, China). "Thin film transistor and elec... Read More

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US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device and method of fabricating the same" (South Korean Inventors)

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "Method for fabricating high electron mobility transistor" (Taiwanese Inventors)

US Patent Issued to SAMSUNG ELECTRONICS on Sept. 1 for "Semiconductor device including inclined channel layer and electronic device including the semiconductor device" (South Korean Inventors)

US Patent Issued to International Business Machines on Sept. 1 for "Multiple fin heights for effective width tuning" (New York Inventors)

US Patent Issued to SHANGHAI BRIGHT POWER SEMICONDUCTOR on Sept. 1 for "Metal-oxide semiconductor field-effect transistor having enhanced high-frequency performance" (Chinese Inventors)

US Patent Issued to UNITED MICROELECTRONICS on Sept. 1 for "FinFET LDMOS device" (Taiwanese Inventors)

US Patent Issued to Wolfspeed on Sept. 1 for "Semiconductor die having a drift region with a charge compensation region formed therein where the charge compensation region has a plurality of guard rings formed in a first and a second opposite doping type portions" (North Carolina Inventors)

US Patent Issued to ROHM on Sept. 1 for "Semiconductor device with groove structure" (Japanese Inventor)

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Sept. 1 for "Method for manufacturing semiconductor structure with thin film transistor" (Belgian, Taiwanese Inventors)

US Patent Issued to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY on Sept. 1 for "Thin film transistor and electronic device thereof" (Chinese Inventors)